(Q51049477)

27 March 2018

title

Vertical and in-plane heterostructures from WS2/MoS2 monolayers. (English)

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27 March 2018

author

Sidong Lei

5

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27 March 2018

Beng Kang Tay

13

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27 March 2018

Junhao Lin

Junhao Lin

2

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Mauricio Terrones

12

Mauricio Terrones

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27 March 2018

Humberto Terrones

11

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Pulickel Ajayan

18

Pulickel M Ajayan

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27 March 2018

Robert Vajtai

9

Robert Vajtai

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27 March 2018

Yongji Gong

1

Yongji Gong

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27 March 2018

Gonglan Ye

8

Gonglan Ye

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27 March 2018

author name string

Xingli Wang

3

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27 March 2018

Gang Shi

4

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27 March 2018

Zhong Lin

6

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27 March 2018

Xiaolong Zou

7

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27 March 2018

Boris I Yakobson

10

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27 March 2018

Jun Lou

14

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27 March 2018

Sokrates T Pantelides

15

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27 March 2018

Zheng Liu

16

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27 March 2018

Wu Zhou

17

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27 March 2018

language of work or name

English

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publication date

28 September 2014

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27 March 2018

published in

Nature Materials

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27 March 2018

volume

13

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27 March 2018

issue

12

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27 March 2018

page(s)

1135-1142

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27 March 2018

https://scigraph.springernature.com/pub.10.1038/nmat4091

exact match

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cites work

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In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

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Nonblinking, intense two-dimensional light emitter: monolayer WS2 triangles.

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12 December 2020

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Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

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Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.

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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

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Van der Waals heterostructures

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Extraordinary room-temperature photoluminescence in triangular WS2 monolayers

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Solar-energy conversion and light emission in an atomic monolayer p-n diode

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Mixed low-dimensional nanomaterial: 2D ultranarrow MoS2 inorganic nanoribbons encapsulated in quasi-1D carbon nanotubes

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Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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Electrical spin injection in a ferromagnetic semiconductor heterostructure

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7 January 2021

Boron nitride substrates for high mobility chemical vapor deposited graphene

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7 January 2021

Electronic properties of the MoS2-WS2heterojunction

1 reference

7 January 2021

Band offsets and heterostructures of two-dimensional semiconductors

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7 January 2021

Identification of individual and few layers of WS2 using Raman Spectroscopy

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7 January 2021

Identifiers

DOI

10.1038/NMAT4091

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27 March 2018

PubMed ID

25262094

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27 March 2018