(Q59482598)

https://www.ebi.ac.uk/europepmc/webservices/rest/search?query=EXT_ID:23263726%20AND%20SRC:MED&resulttype=core&format=json

21 February 2020

title

Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics (English)

1 reference

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21 February 2020

1 reference

0 references

field-effect transistor

1 reference

5

1 reference

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21 February 2020

Sergey Morozov

6

1 reference

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21 February 2020

Sarah Jane Haigh

9

1 reference

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21 February 2020

Oleg Makarovsky

10

1 reference

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21 February 2020

Laurence Eaves

11

1 reference

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21 February 2020

Konstantin Novoselov

14

1 reference

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21 February 2020

Artem Mishchenko

15

1 reference

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21 February 2020

13

Andre K Geim

1 reference

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21 February 2020

Ali Gholinia

8

0 references

Rashid Jalil

2

Rashid Jalil

1 reference

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21 February 2020

Branson D Belle

3

Branson D Belle

1 reference

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21 February 2020

Liam Britnell

4

Liam Britnell

1 reference

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21 February 2020

Thanasis Georgiou

1

Thanasis Georgiou

1 reference

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21 February 2020

author name string

Yong-Jin Kim

7

1 reference

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21 February 2020

Leonid A Ponomarenko

12

1 reference

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21 February 2020

publication date

23 December 2012

1 reference

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21 February 2020

published in

Nature Nanotechnology

1 reference

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21 February 2020

volume

8

1 reference

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21 February 2020

issue

2

1 reference

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21 February 2020

page(s)

100-103

1 reference

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https://scigraph.springernature.com/pub.10.1038/nnano.2012.224

21 February 2020

exact match

0 references

cites work

Boron nitride substrates for high-quality graphene electronics.

1 reference

12 December 2020

Electric Field Effect in Atomically Thin Carbon Films

1 reference

12 December 2020

Measurement of the elastic properties and intrinsic strength of monolayer graphene

1 reference

12 December 2020

Graphene: status and prospects

1 reference

12 December 2020

Fine structure constant defines visual transparency of graphene.

1 reference

12 December 2020

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

1 reference

12 December 2020

Two-dimensional nanosheets produced by liquid exfoliation of layered materials

1 reference

12 December 2020

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

1 reference

12 December 2020

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

1 reference

12 December 2020

Roll-to-roll production of 30-inch graphene films for transparent electrodes

1 reference

12 December 2020

Stretching and breaking of ultrathin MoS2.

1 reference

12 December 2020

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

1 reference

12 December 2020

Two-dimensional atomic crystals

1 reference

12 December 2020

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

1 reference

12 December 2020

The electronic properties of graphene

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Nobel Lecture: Graphene: Materials in the Flatland

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Tunable metal–insulator transition in double-layer graphene heterostructures

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Strong Coulomb drag and broken symmetry in double-layer graphene

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Optical identification of atomically thin dichalcogenide crystals

1 reference

https://api.crossref.org/works/10.1038%2FNNANO.2012.224

7 January 2021

Identifiers

DOI

10.1038/NNANO.2012.224

1 reference

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21 February 2020

0 references

1 reference