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The present status of quantum dot lasers
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title
The present status of quantum dot lasers
(English)
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main subject
quantum dot
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author
Marius Grundmann
series ordinal
1
object named as
Marius Grundmann
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publication date
December 1999
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published in
Physica E: Low-Dimensional Systems and Nanostructures
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volume
5
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issue
3
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page(s)
167-184
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cites work
Low threshold, large To injection laser emission from (InGa)As quantum dots
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Multidimensional quantum well laser and temperature dependence of its threshold current
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Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
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Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
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Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments
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Ultranarrow Luminescence Lines from Single Quantum Dots
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InAs/GaAs quantum dots radiative recombination from zero-dimensional states
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Theory of random population for quantum dots
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New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck
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Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-States
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Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks
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Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
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Dephasing in InAs/GaAs quantum dots
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Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
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Self-organization processes in MBE-grown quantum dot structures
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Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation
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Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
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Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots
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Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates
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Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
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An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
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Vertically self-organized InAs quantum box islands on GaAs(100)
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Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
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Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots
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Prevention of gain saturation by multi-layer quantum dot lasers
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Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
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Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
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https://api.crossref.org/works/10.1016%2FS1386-9477%2899%2900041-7
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Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
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Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
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Recombination dynamics in pseudomorphic and partially relaxedIn0.23Ga0.77As/GaAs quantum wells
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Microlaser: A laser with One Atom in an Optical Resonator
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Ion-trap laser
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Master-equation model of a single-quantum-dot microsphere laser
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Theory of the Contribution of Excitons to the Complex Dielectric Constant of Crystals
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Quantum cascade laser
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Electron relaxation in a quantum dot: Significance of multiphonon processes
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Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
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Identifiers
DOI
10.1016/S1386-9477(99)00041-7
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