(Q62395001)

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New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck

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title

New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck (English)

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1 reference

3

D. Bimberg

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author name string

M. Grundmann

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1

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R. Heitz

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2

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publication date

July 1998

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published in

Physica E: Low-Dimensional Systems and Nanostructures

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volume

2

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issue

1-4

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page(s)

725-728

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cites work

Photon-Radiative Recombination of Electrons and Holes in Germanium

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https://api.crossref.org/works/10.1016%2FS1386-9477%2898%2900148-9

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Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments

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Theory of random population for quantum dots

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Luminescence from excited states in strain-inducedInxGa1−xAs quantum dots

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Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

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Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

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Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-States

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Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck

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10.1016/S1386-9477(98)00148-9

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(Q62395001)

New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck

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