(Q62394997)

1

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M. Veit

2

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A. Kalburge

3

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Q. Xie

4

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M. Grundmann

5

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P. Chen

6

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N.N. Ledentsov

7

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A. Hoffmann

8

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A. Madhukar

9

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V.M. Ustinov

11

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P.S. Kop'ev

12

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Zh.I. Alferov

Physica E: Low-Dimensional Systems and Nanostructures

13

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publication date

July 1998

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published in

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volume

2

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issue

1-4

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page(s)

578-582

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cites work

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Intrinsic mechanism for the poor luminescence properties of quantum-box systems

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Electron relaxation in a quantum dot: Significance of multiphonon processes

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Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

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Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

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Carrier relaxation and electronic structure in InAs self-assembled quantum dots

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Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots

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Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck

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Vertically self-organized InAs quantum box islands on GaAs(100)

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InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

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Theory of random population for quantum dots

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Very large optical nonlinearity of semiconductor microcrystallites

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