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English
Properties of theD1bound exciton in4H−SiC
scholarly article in Physical Review B, vol. 59 no. 3, January 1999
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instance of
scholarly article
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title
Properties of theD1bound exciton in4H−SiC
(English)
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author
Erik Janzén
series ordinal
5
object named as
E. Janzén
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Anne Henry
series ordinal
4
object named as
A. Henry
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Ivan G. Ivanov
series ordinal
3
object named as
I. G. Ivanov
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author name string
T. Egilsson
series ordinal
1
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J. P. Bergman
series ordinal
2
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language of work or name
English
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publication date
15 January 1999
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published in
Physical Review B
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volume
59
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issue
3
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page(s)
1956-1963
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cites work
High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition
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Crossref
reference URL
https://api.crossref.org/works/10.1103%2FPHYSREVB.59.1956
retrieved
21 January 2018
Identifiers
DOI
10.1103/PHYSREVB.59.1956
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